Samsung starts production of 512-Gigabyte eUFS for Next-Gen smart devices. - TechSource International - Leaders in Technology News

Samsung starts production of 512-Gigabyte eUFS for Next-Gen smart devices.

The new 512GB eUFS package will boost storage capacity and performance.
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Samsung has begun mass production of the industry’s first 512-gigabyte eUFS solution for use in next-generation mobile devices.

Samsung has begun mass production of the industry’s first 512-gigabyte eUFS solution for use in next-generation mobile devices.

Samsung Electronics has announced that it has begun mass production of the industry’s first 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) solution for use in next-generation mobile devices. What this means is that potential users stand to benefit from unparalleled storage capacity for smartphones and tablets utilizing the company’s 64-layer 512-gigabit (Gb) V-NAND chips, the new 512GB.

Consisting of eight 64-layer 512Gb V-NAND chips and a controller chip, all stacked together, the South Korean tech giant’s new 512GB UFS doubles the density of Samsung’s previous 48-layer V-NAND-based 256GB eUFS, in the same amount of space as the 256GB package. So essentially, this means that the new high-capacity eUFS will enable a flagship smartphone to store approximately 130 4K Ultra HD (3840×2160) video clips of a 10-minute duration, Samsung said in a press release. This equates to a tenfold increase over a 64GB eUFS which allows storing only about 13 of the same-sized video clips.

Samsung's new 512GB UFS doubles the density of Samsung’s previous 48-layer V-NAND-based 256GB eUFS.

Samsung's new 512GB UFS doubles the density of Samsung’s previous 48-layer V-NAND-based 256GB eUFS.

According to Samsung, the 64-layer 512Gb V-NAND’s advanced circuit design and new power management technology in the 512GB eUFS’ controller minimise the inevitable increase in energy consumed, which is particularly noteworthy since the new 512GB eUFS solution contains twice the number of cells compared to a 256GB eUFS. In addition, the 512GB eUFS’ controller chip speeds up the mapping process for converting logical block addresses to those of physical blocks.

The Samsung 512GB eUFS also features strong read and write performance. Its sequential read speed will reach 860 megabytes per second (MB/s) and its write speed 255MB/s. For random operations for instance, the new eUFS can read 42,000 IOPS and write 40,000 IOPS.

Samsung also indicated that it intends to increase production volume for its 64-layer 512Gb V-NAND chips, in addition to expanding its 256Gb V-NAND production. This should meet the increase in demand for advanced embedded mobile storage, as well as for premium SSDs and removable memory cards with high density and performance, the tech titan said.